Atomistic comparative study of VUV photodeposited silicon nitride on InP(100) by simulation and atomic force microscopy: discrete representation and topological analysis

Surface atomistic structures of a-SiN:H vacuum ultra violet (VUV) photodepo sited on InP(100) have been investigated by using atomic force microscopy ( AFM) and index of refraction (RI). After simultaneous VUV irradiation (185 nm) and heating (400-650 K), the onset of nucleation shown SiN:H islands on the InP substrate prior to the deposition stage. We have proposed a new ph otodeposition model taking into account the molecular dynamics (MD) of the adsorbed species imposed to a Monte Carlo (MC) computation technique. Featu res estimated or obtained through experimental validation are emphasized. T his allows the evaluation of both the simulator and physical model. Also de position kinetics, in addition to surface and bulk features, are clearly ev idenced and simulated in 3-D images. To this end, we developed analytical t ools to exactly track discrete boundaries of the deposition bulk and pores from simulation data, in the form of voxels for each site of the face cente red cubic (fcc) referential. These tools use a discrete-topology approach t o isolate, count and measure individual pores, as well as the top surface f eatures. Discrete neighborhoods in the fee referential are also considered in the framework of the mathematical morphology in order to correctly measu re discrete approximations of Euclidean surface and other morphological par ameters. These tools helped to quantify the simulator results, in order to compare them with experimental data and also validate the physical model. 3 -D visualization of surfaces and pores further aided us to see in an organi zed fashion the output of the simulator, e.g. by sorting pore features by s ize, or location in the bulk. (C) 2000 Elsevier Science B.V. All rights res erved.