Influence of acceptor impurities on semi-insulating GaAs particle detectors

GaAs Schottky diodes, made on semi-insulating liquid encapsulated Czochrals ki grown material with concentrations of acceptor dopants N-a varying from 10(14) to 10(17) cm(-3), were investigated as alpha particle detectors. The charge collection efficiency (CCE) was found to decrease dramatically with increasing N-a. Optical spectra in transmittance and reflectance were accu rately measured to determine the concentrations of both neutral and ionised EL2 defects as a function of N-a. The concentration of ionised EL2(+) cent res was shown to increase with N-a, and to be quasi inversely proportional to the CCE values. This behaviour strongly supports the hypothesis that the EL2 defects play the main role in the compensation of the material and in limitation of the detection properties.