A power-efficient, low-noise, wideband, integrated CMOS preamplifier for LSO/APD PET systems

Citation
Dm. Binkley et al., A power-efficient, low-noise, wideband, integrated CMOS preamplifier for LSO/APD PET systems, IEEE NUCL S, 47(3), 2000, pp. 810-817
Citations number
26
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Nuclear Emgineering
Journal title
IEEE TRANSACTIONS ON NUCLEAR SCIENCE
ISSN journal
00189499 → ACNP
Volume
47
Issue
3
Year of publication
2000
Part
2
Pages
810 - 817
Database
ISI
SICI code
0018-9499(200006)47:3<810:APLWIC>2.0.ZU;2-Y
Abstract
A power-efficient, low-noise, wideband, 0.8-mu CMOS charge-sensitive preamp lifier has been designed and optimized for LSO/APD based PET systems. Low-n oise, wideband performance is needed to achieve I-ns FWHM timing resolution available from LSO/APD detectors, and power efficiency is needed since tho usands of preamplifiers are required in a LSO/APD based PET tomograph. A me thodology for optimizing wideband timing performance is presented to minimi ze dominant, frequency-turn-up, input-noise current associated with input n oise voltage and total capacitance at the input. The methodology suggests t he use of a nMOS input device operating in moderate inversion for high tran sconductance and low input white-noise voltage consistent with moderate inp ut capacitance. Measured preamplifier input-referred, white-noise voltage i s 0.65 nV/root Hz and risetime is 6 ns (58 MHz 3-dB bandwidth). Measured ti ming resolution is 1.15 ns FWHM and energy resolution is 12.1% FWHM for 511 -keV gamma rays detected by a 4 x 4 x 10 mm LSO crystal coupled to an APD. Measurements include the APD capacitance of 30 pF and are obtained at a pre amplifier input-device current of only 2 mA.