A new architecture of the controlled-drift detector: Design and characterization

A novel X-ray silicon detector for time-resolved 2D imaging has been recent ly proposed. The detector, called Controlled-Drift Detector, is operated in integrate-readout mode. Its basic feature is the fast transport of the int egrated charge to the output electrode by means of a uniform. drift field. The drift time of the charge packet identifies the pixel of incidence. A new architecture to implement the Controlled-Drift Detector concept will be presented. The potential wells for the integration of the signal charge are obtained by means of a suitable pattern of deep n-implants and deep p-i mplants. During the readout mode the signal electrons are transferred in th e drift channel that flanks each column of potential wells where they drift towards the collecting electrode at constant velocity. The first experimen tal measurements demonstrate the successful integration, transfer and drift of the signal electrons. First tests of X-ray imaging and spectroscopy are presented and discussed.