Response of MOSFETS from DMILL technology to high total dose levels

Authors
Armani, JM Brisset, C Joffre, F Dentan, M
Citation
Jm. Armani et al., Response of MOSFETS from DMILL technology to high total dose levels, IEEE NUCL S, 47(3), 2000, pp. 592-597
Citations number
10
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Nuclear Emgineering
Journal title
IEEE TRANSACTIONS ON NUCLEAR SCIENCE
ISSN journal
00189499 → ACNP
Volume
47
Issue
3
Year of publication
2000
Part
1
Pages
592 - 597
Database
ISI
SICI code
0018-9499(200006)47:3<592:ROMFDT>2.0.ZU;2-1
Abstract
We have investigated the response of MOS transistors fabricated using the D MILL process and irradiated to a total dose of 1 MGy(Si)(1) with a Co-60 so urce. Results show that parameter shifts remain limited, thus authorizing u se of this technology in environments involving very high levels of radiati on.