Total dose behavior of partially depleted SOI dynamic threshold voltage MOS (DTMOS) for very low supply voltage applications (0.6-1V)

Authors
Ferlet-Cavrois, V Paillet, P Musseau, O Leray, JL Faynot, O Raynaud, C Pelloie, JL
Citation
V. Ferlet-cavrois et al., Total dose behavior of partially depleted SOI dynamic threshold voltage MOS (DTMOS) for very low supply voltage applications (0.6-1V), IEEE NUCL S, 47(3), 2000, pp. 613-619
Citations number
31
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Nuclear Emgineering
Journal title
IEEE TRANSACTIONS ON NUCLEAR SCIENCE
ISSN journal
00189499 → ACNP
Volume
47
Issue
3
Year of publication
2000
Part
1
Pages
613 - 619
Database
ISI
SICI code
0018-9499(200006)47:3<613:TDBOPD>2.0.ZU;2-0
Abstract
The DTMOS architecture is particularly suited to very low supply voltage ap plications (0.6-1V). This paper presents DTMOS devices processed with a par tially depleted 0.25 mu m SOI technology. It analyses their electrical beha vior under total dose irradiation.