Impact of technology scaling in SOI back-channel total dose tolerance. A 2-C numerical study using self-consistent oxide code

A new 2D-self-consistent code has been developed and is applied to the unde rstanding of charge trapping in SOI buried oxides and its effect on back-ch annel MOS leakage in SOI transistors. 2D effects, field-collapse and field- enhancement are observed. Clear indications on scaling trends are obtained with respect to supply voltage and oxide thickness. In thinner oxides, 2D e ffects are observed for example, the onset of back-channel leakage current is found to be related to the ratio of the channel length on the oxide thic kness.