Use of commercial VDMOSFETs in electronic systems subjected to radiation

Authors
Picard, C Brisset, C Quittard, O Marceau, M Hoffmann, A Joffre, F Charles, JP
Citation
C. Picard et al., Use of commercial VDMOSFETs in electronic systems subjected to radiation, IEEE NUCL S, 47(3), 2000, pp. 627-633
Citations number
14
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Nuclear Emgineering
Journal title
IEEE TRANSACTIONS ON NUCLEAR SCIENCE
ISSN journal
00189499 → ACNP
Volume
47
Issue
3
Year of publication
2000
Part
1
Pages
627 - 633
Database
ISI
SICI code
0018-9499(200006)47:3<627:UOCVIE>2.0.ZU;2-F
Abstract
This study explores the effectiveness of pre-irradiation as a hardening tec hnique for COTS components used in electronic power systems. This technique greatly improves the radiation tolerance of VDMOSFETs in such systems, whe reby a small change in R-dson is observed.