Citation
C. Picard et al., Radiation hardening of power MOSFETs using electrical stress, IEEE NUCL S, 47(3), 2000, pp. 641-646
Citations number
14
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Nuclear Emgineering
Journal title
IEEE TRANSACTIONS ON NUCLEAR SCIENCE
ISSN journal
00189499
→ ACNP
Volume
47
Issue
3
Year of publication
2000
Part
1
Pages
641 - 646
Database
ISI
SICI code
0018-9499(200006)47:3<641:RHOPMU>2.0.ZU;2-U
Abstract
Application of high voltage electrical stresses to NVDMOSFET-type COTS tran
sistors was explored as an original hardening option. Such pre-irradiation
treatment enhances transistor response to total dose.