Radiation tolerance of NPN bipolar technology with 30 GHz Ft

Authors
Flament, O Synold, S de Pontcharra, J Niel, S
Citation
O. Flament et al., Radiation tolerance of NPN bipolar technology with 30 GHz Ft, IEEE NUCL S, 47(3), 2000, pp. 654-658
Citations number
24
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Nuclear Emgineering
Journal title
IEEE TRANSACTIONS ON NUCLEAR SCIENCE
ISSN journal
00189499 → ACNP
Volume
47
Issue
3
Year of publication
2000
Part
1
Pages
654 - 658
Database
ISI
SICI code
0018-9499(200006)47:3<654:RTONBT>2.0.ZU;2-8
Abstract
The tolerance to both ionizing dose and displacement damage of a Quasi-Self Aligned (QSA) single polysilicon emitter bipolar technology fabricated wit h a 0.35 mu m design rules CMOS is presented. In this work we explore the e ffect of dose rate, high dose level irradiation and elevated temperature ir radiation on the electrical performance of single polysilicon bipolar trans istors. The different results are discussed and comparison with previous ar e presented to place the technology with respect to others.