Physical mechanisms involved during transient irradiation of a 1300 nm laser diode.

Citation
E. Pailharey et al., Physical mechanisms involved during transient irradiation of a 1300 nm laser diode., IEEE NUCL S, 47(3), 2000, pp. 682-687
Citations number
9
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Nuclear Emgineering
Journal title
IEEE TRANSACTIONS ON NUCLEAR SCIENCE
ISSN journal
00189499 → ACNP
Volume
47
Issue
3
Year of publication
2000
Part
1
Pages
682 - 687
Database
ISI
SICI code
0018-9499(200006)47:3<682:PMIDTI>2.0.ZU;2-1
Abstract
The behavior of a commercial 1300 nm laser diode under transient irradiatio ns is studied to validate the use of an optical data link in a radiative en vironment. A Nd:YAG laser is used to simulate the irradiation without any p ermanent damage, Two specific wavelengths are selected: 1064 nm which allow s a selective excitation of the laser cavity simulating transient effects o f a single particle and 532 nm which interacts with the whole device. The t emporal response of the diode is first observed and its shape is interprete d as a function of the physical structure of the device. Then the variation of the time of return to equilibrium after a perturbation is presented as a function of bias current. The limitations on the optical links for both a nalogue and digital applications are then discussed.