The surface structure of a highly oriented pyrolytic graphite (HOPG), irrad
iated by Ar+ ions with an ion energy of 0,5-1.0keV at doses below 5 x 10(11
) ions/cm(2) during annealing, was characterized by scanning probe microsco
py. The ion-induced hillocks were observed by both scanning tunneling micro
scopy (STM) and atomic force microscopy (AFM) after the ion irradiation, th
e heights of which, measured by STM, were larger than that measured by AFM
in the tapping mode. The hillocks were recovered distinguishably by anneali
ng above 470 K. Almost 85% of the hillocks disappeared after annealing at 1
270 K and they disappeared completely after annealing above 1770 K. The beh
avior of defects produced by ion-irradiation in HOPG during annealing is di
scussed.