Magneto-photoluminescence study of InGaAs/GaAs quantum wells and quantum dots grown on (111)B GaAs substrate

InGaAs/GaAs quantum well (QW) and quantum dot (QD) structures grown on GaAs (111)B substrates under different growing temperatures are investigated by magneto-photoluminescence (PL) up to 15 T in both Faraday and Voigt config urations. The spatial extents of the carrier wave functions (ECWFs) are ded uced from the diamagnetic shift of the PL peak energy. The binding energies of the InGaAs/GaAs QWs are evaluated to be about 5 meV. The QW ECWFs in th e growth direction obtained by the diamagnetic shift are consistent with th ose calculated by the k . p theory. The heights and radii of the InGaAs/GaA s QDs are also estimated from the ECWFs. In addition, we found that the in- plane ECWFs decreased slightly as the growth temperature was varied from 52 5 to 450 degrees C. The ECWFs in the growth direction decreased when the gr owth temperature was varied from 525 to 480 degrees C and then increased as the temperature was decreased to 450 degrees C.