Peak width analysis of current-voltage characteristics of triple-barrier resonant tunneling diodes

Authors
Nagase, M Suhara, M Miyamoto, Y Furuya, K
Citation
M. Nagase et al., Peak width analysis of current-voltage characteristics of triple-barrier resonant tunneling diodes, JPN J A P 1, 39(6A), 2000, pp. 3314-3318
Citations number
7
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS → ACNP
Volume
39
Issue
6A
Year of publication
2000
Pages
3314 - 3318
Database
ISI
SICI code
Abstract
We studied the peak width of current vs voltage (I-V) characteristics of tr iple-barrier resonant tunneling diodes (TBRTDs) experimentally and theoreti cally. A GaInAs/InP TBRTD was fabricated by organo metallic vapor phase epi taxy (OMVPE). A theory of I-V characteristics of TBRTDs was developed by ta king the structural inhomogeneity into account to explain the experimental peak width. The fluctuation of the well width in a TBRTD grown by OMVPE was estimated as two atomic layers.