Compositional changes of SiC/Si structure during vacuum annealing

Compositional changes of SiC/Si structure during vacuum annealing are inves tigated by Auger electron spectroscopy. An amorphous SiC film is grown on t he (111) Si substrate at 600 degrees C by hydrogen plasma sputtering. The o btained SiC/Si structure is annealed in the temperature range of 650-950 de grees C in vacuum. When the annealing temperature is lower than 800 degrees C, no significant compositional or structural changes are observed in the SiC/Si structure. On the other hand, when the annealing temperature is high er than 800 degrees C, crystallization of the amorphous SiC film takes plac e, resulting in both shrinking and subsequent stress in the SiC him. The st ress leads to the crack in the film, and may enhance the gasification of Si and C atoms in the structure.