Fabrication of surface acoustic wave-semiconductor coupled devices using epitaxial lift-off technology

In this paper, we report the results of a study on the fabrication process of surface acoustic wave-semiconductor coupled devices, using epitaxial lif t-off (ELO) and thin-film bonding technology. In order to realize a rugged bonding interface between the semiconductor him and piezoelectric substrate , we studied the 1) optimum conditions controlling stress in GaAs films, 2) reduction of releasing time for GaAs films, 3) and enhancement of bonding force between the film and LiNbO3 substrate. The experimental results clari fied that these process improvements were effective for fabricating functio nal devices with the AlGaAs/LiNbO3 structure.