Strains in InAs quantum dots embedded in GaAs: A finite element study

Strains in InAs quantum dots embedded in GaAs have been examined using a 2- D axi-symmetric finite element method within a thermo-mechanical framework. The initial shape of the dot was assumed to be conical in 3-D. Results sho w that the shape and the width/height ratio are critical in determining the strains within the quantum dots. Results of the calculation are compared w ith the results of other calculations and experimental measurements of stra ins using the scanning tunneling microscope (STM).