Improvement of polysilicon oxide integrity using NF3-annealing

Authors
Yang, WL Shieh, MS Chen, YM Chao, TS Liu, DG Lei, TF
Citation
Wl. Yang et al., Improvement of polysilicon oxide integrity using NF3-annealing, JPN J A P 2, 39(6B), 2000, pp. L562-L563
Citations number
8
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS → ACNP
Volume
39
Issue
6B
Year of publication
2000
Pages
L562 - L563
Database
ISI
SICI code
Abstract
We report a method to improve the polysilicon oxide integrity by using NF3- annealing. Incorporating with stronger Si-N and Si-F bonds at the polysilic on/polyoxide interface, significant improvements are found in terms of roug hness, breakdown strength, charge-to-breakdown, and stress-induced-leakage- current.