Phosphorus vacancy as a deep level in AlInP layers

Deep levels in AlInP layers, grown by metal-organic chemical vapor depositi on (MOCVD) with various V/III mole ratios, have been carefully investigated by deep-level transient spectroscopy (DLTS). A deep level originating from phosphorus vacancy was observed with the activation energy of 0.65 eV. Exa mining this phosphorus-vacancy-related deep level provided a relatively sim ple means of understanding the phosphorus vacancy in AlInP, thus allowing u s to determine an appropriate V/III mole ratio for growing AlInP.