RAPID ANNEALING MEASUREMENTS IN FULLY-DEPLETED NMOS SOI/

Authors
GRUBER O FERLETCAVROIS V PAILLET P MUSSEAU O RAYNAUD C PELLOIE JL
Citation
O. Gruber et al., RAPID ANNEALING MEASUREMENTS IN FULLY-DEPLETED NMOS SOI/, Microelectronic engineering, 36(1-4), 1997, pp. 249-252
Citations number
8
Categorie Soggetti
Optics,"Physics, Applied","Engineering, Eletrical & Electronic
Journal title
Microelectronic engineering → ACNP
ISSN journal
01679317
Volume
36
Issue
1-4
Year of publication
1997
Pages
249 - 252
Database
ISI
SICI code
0167-9317(1997)36:1-4<249:RAMIFN>2.0.ZU;2-D
Abstract
A new method is proposed to investigate charge transport and trapping in the buried oxide of advanced SOI technologies. This is a concern fo r hardening studies as well as hot carrier effects, especially for ful ly-depleted transistors which are sensitive to buried oxide trapping a nd reliability [1, 2]. The rapid annealing of charges generated in the buried oxide is determined by measuring the threshold voltage shift o f the front gate fully-depleted NMOS transistor, thanks to the couplin g effect with the back interface.