Growth of InSb(1-x)Bix crystals by rotatory Bridgman method and their characterization

Authors
Dixit, VK Rodrigues, BV Bhat, HL
Citation
Vk. Dixit et al., Growth of InSb(1-x)Bix crystals by rotatory Bridgman method and their characterization, J CRYST GR, 217(1-2), 2000, pp. 40-46
Citations number
6
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
JOURNAL OF CRYSTAL GROWTH
ISSN journal
00220248 → ACNP
Volume
217
Issue
1-2
Year of publication
2000
Pages
40 - 46
Database
ISI
SICI code
0022-0248(200007)217:1-2<40:GOICBR>2.0.ZU;2-M
Abstract
The rotatory Bridgman method was used to grow ternary InSb(1-x)Bix crystals . In this method the ampoule was subjected to ACRT like reversible rotation at a peak rate of 60 rpm. High-quality crystals of 8 mm diameter and 25 mm length were grown with 6.54 atomic percentage of Bi. The grown crystals we re characterized employing various techniques such as energy-dispersive X-r ay analysis, X-ray diffraction, differential scanning calorimetery, infrare d spectroscopy and Hall measurement. (C) 2000 Elsevier Science B.V. All rig hts reserved.