Improvement in wafer temperature uniformity and flow pattern in a lamp heated rapid thermal processor

Citation
Cp. Yin et al., Improvement in wafer temperature uniformity and flow pattern in a lamp heated rapid thermal processor, J CRYST GR, 217(1-2), 2000, pp. 201-210
Citations number
21
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
JOURNAL OF CRYSTAL GROWTH
ISSN journal
00220248 → ACNP
Volume
217
Issue
1-2
Year of publication
2000
Pages
201 - 210
Database
ISI
SICI code
0022-0248(200007)217:1-2<201:IIWTUA>2.0.ZU;2-5
Abstract
An experimental lamp heated, rapid thermal processor (RTP) for an 8-in sing le silicon wafer was designed and established to investigate the thermal an d flow characteristics in the processing chamber by transient temperature m easurement and flow visualization. Experiments were carried out to explore the effects of placing a highly conducting copper plate right below the waf er on the uniformity of the wafer temperature and effects of the showerhead on the resulting flow distribution in the processing chamber. The measured data indicated that adding the copper plate can effectively reduce the non uniformity of the wafer temperature. Besides, using a showerhead with finer holes in it results in a better flow distribution in the processor. (C) 20 00 Elsevier Science B.V. All rights reserved.