Structural and optical measurements have been made on a series of amorphous
thin films of Si1-xNix with 0 < x < 0.75, prepared by RF sputtering. We pr
esent the results of structural studies using extended x-ray absorption fin
e structure (EXAFS) and small angle x-ray scattering (SAXS) together with o
ptical measurements of the band gap.
The EXAFS analysis gave interatomic distances, partial coordination numbers
and Debye-Waller factors for the nearest neighbours of the two atom types.
The Ni environment was found to he independent of composition for x < 0.5.
A small variation in the mean Si-Si distance was also found in this compos
ition range. The SAXS results show phase segregation, on the 30 Angstrom sc
ale, for this composition range. We interpret the structural data in terms
of a two-phase model, amorphous Si plus amorphous NiSi, for x < 0.5 and a s
ingle-phase model for x > 0.5.
The optical data show that a metal-insulator transition occurs at about 10-
15% Ni content. We suggest that this transition should be interpreted in te
rms of a percolation theory involving regions of conducting amorphous NiSi
in an amorphous Si matrix.