Low-temperature growth of Ti(C,N) thin films on D2 steel and Si(100) substrates by plasma-enhanced metalorganic chemical vapor deposition

We have deposited Ti(C,N) thin films on Si(100) and D2 steel substrates in the temperature range of 200-300 degrees C using tetrakis diethylamidotitan ium (TDEAT) and titanium isopropoxide (TIP) by pulsed de plasma-enhanced me talorganic chemical vapor deposition (PEMOCVD). Radical formation and ioniz ation behaviors in plasma are analyzed in situ by optical emission spectros copy at various pulsed bias voltages and gas conditions. H-2 and He+H-2 gas es are used as carrier gases to compare plasma parameters, and the effect o f N-2 and NH3 as reactive gas is also evaluated by the reduction of the C c ontent of the films. Polycrystalline TI(C,N) thin films were successfully g rown On either D2 steel or Si(100) surfaces with TDEAT at temperatures as l ow as 200 degrees C. For TIP, however, only TiOCN thin films were obtained on Si(100) substrates. The best deposition process is evident for H-2 and N -2 gas atmospheres and bias voltage of 600 V. The higher film hardness is a bout 1760 Hk 0.01, but depends on gas species and bias voltage. Compared to TiN films, the Ti(C,N) film grown by PEMOCVD has very good conformability; the step coverage exceeds 85%, with an aspect ratio of more than 3. (C) 20 00 American Vacuum Society. [S0734-2101(00)17503-9].