In-situ characterization of thin films by the focused ion beam

In this article, we report silicon-based multilayered nanometer-size wires for vertical metal oxide semiconductor held effect transistor (MOSFET) and the ohmic contact of gallium nitride (GaN) field effect transistor (FET) we re milled to produce trenches with a micron-scale rectangular area for a su bsequent inspection by the field emission scanning electron microscope (FES EM). The cross-sectioning view by the FESEM enabled the investigation of in dividual film thickness and morphology as well as a depth profiling of elem ents by a subsequent Auger analysis. Monte Carlo simulation was done to est imate the penetration range of gallium ions into silicon and GaN at high en ergy. (C) 2000 American Vacuum Society. [S0734-2101(00)03904-X].