Pinhole decoration in magnetic tunnel junctions

Citation
D. Allen et al., Pinhole decoration in magnetic tunnel junctions, J VAC SCI A, 18(4), 2000, pp. 1830-1833
Citations number
16
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS
ISSN journal
07342101 → ACNP
Volume
18
Issue
4
Year of publication
2000
Part
2
Pages
1830 - 1833
Database
ISI
SICI code
0734-2101(200007/08)18:4<1830:PDIMTJ>2.0.ZU;2-V
Abstract
Magnetic tunnel junctions may experience failure due to local shortcuts in the insulating layers of such devices. To further develop magnetic tunnel j unctions. the areal density of pinholes must be analyzed. By electrodeposit ing copper, we have developed a method to image pinholes and analyze the de nsity of pinholes. Copper selectively nucleates at particular sites, formin g structures that can be visualized using an optical microscope. Using this method, we examined the change in size of grown copper structures over tim e and the increase in the areal density of defects as a function of the app lied electrodeposition potential. (C) 2000 American Vacuum Society. [S0734- 2101(00)05704-3].