Production of single quasicrystals and their electrical resistivity in theAl-Pd-Re system

Citation
Jq. Guo et al., Production of single quasicrystals and their electrical resistivity in theAl-Pd-Re system, PHIL MAG L, 80(7), 2000, pp. 495-502
Citations number
17
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHILOSOPHICAL MAGAZINE LETTERS
ISSN journal
09500839 → ACNP
Volume
80
Issue
7
Year of publication
2000
Pages
495 - 502
Database
ISI
SICI code
0950-0839(200007)80:7<495:POSQAT>2.0.ZU;2-O
Abstract
Single Al-Pd-Re icosahedral quasicrystals with a maximum diameter of 5 mm h ave been grown by a slow cooling method on the basis of a partial phase dia gram determined in the present study. Laue X-ray and electron diffraction v erified the highly ordered structure of the single icosahedral quasicrystal s. The electrical resistivity p of the single quasicrystals was measured to be 2000-4000 mu Omega cm at 300K and 3000-6000 mu Omega cm at 2K, revealin g a negative temperature dependence with a rho(4.2K)/rho(300K) value smalle r than 2.