Level quantization in the narrow-gap-semiconductor quantum well in a parallel magnetic field

Authors
Dugaev, VK Litvinov, VI Dobrowolski, W
Citation
Vk. Dugaev et al., Level quantization in the narrow-gap-semiconductor quantum well in a parallel magnetic field, PHYS REV B, 62(3), 2000, pp. 1905-1911
Citations number
21
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICAL REVIEW B
ISSN journal
01631829 → ACNP
Volume
62
Issue
3
Year of publication
2000
Pages
1905 - 1911
Database
ISI
SICI code
0163-1829(20000715)62:3<1905:LQITNQ>2.0.ZU;2-U
Abstract
An analytical approach is developed for the energy levels in Group-TV-VI na rrow-gap semiconductor quantum wells in a parallel magnetic field. Asymptot ic closed-form expressions are obtained. Numerical calculations are done fo r the energy spectrum of the EuS/PbS/EuS quantum well in the magnetic field of an arbitrary strength. The effect of an anisotropy of the electron vall eys is also discussed.