In the past years, the interest in the physics of mesoscopic device structu
res has increased as the patterning of such systems became more and more ap
plicable. Mesoscopic structures uncover new physics since size effects play
an important role. For patterning, self-organizing processes are promising
, but they can also bear difficulties. Self-organization phenomena are, how
ever, interesting from a physical point of view and offer cheap possibiliti
es for production purposes. But they are not totally regular, and one proce
ss is restrained to a limited number of structures and materials. For the u
nderstanding of the electrical behavior of these mesoscopic structures, the
form and the slight variation of one from the other have to be taken into
account as well as the material properties. In this paper, we present an el
ectrical characterization of carbon networks produced by a self-organizing
process. The net structure consists of hexagonal basis cells with a diamete
r of about 1 mu m and the dimensions of the interconnections of about 100 n
m. We find that in the temperature range from 4.2 to 150 K, the specific re
sistivity rho depends on temperature T as rho(T) proportional to T-0.3 3 ex
p([T-0/](1/p)) and the transport mechanism, therefore, is variable range ho
pping. For 4.2 K < T < 26 K, it is p = 4 and the local activation energy sc
ales as epsilon(alpha)(T) proportional to T-3/4. In the temperature range f
rom 4.2 to 30 K, the current-voltage characteristics exhibit a temperature-
dominated part in the low-voltage regime and a voltage-dominated part in th
e high-voltage regime. The first can be described according to Mott's law,
whereas the second scales as sigma(E) = sigma(1) exp(A*E-n), where A and si
gma(1) depend on temperature. A change of the factor n from 1 to 0 takes pl
ace with increasing electric field.