Using temperature to tune film roughness: Nonintuitive behavior in a simple system

Citation
Cr. Stoldt et al., Using temperature to tune film roughness: Nonintuitive behavior in a simple system, PHYS REV L, 85(4), 2000, pp. 800-803
Citations number
19
Categorie Soggetti
Physics
Journal title
PHYSICAL REVIEW LETTERS
ISSN journal
00319007 → ACNP
Volume
85
Issue
4
Year of publication
2000
Pages
800 - 803
Database
ISI
SICI code
0031-9007(20000724)85:4<800:UTTTFR>2.0.ZU;2-P
Abstract
Ag(100) homoepitaxy constitutes one of the simplest systems in which to stu dy thin-film growth. Yet we find that the roughness variation with temperat ure is extraordinarily complex. Specifically, as the deposition temperature is reduced from 300 to 50 K, the roughness of 35 monolayer films first inc reases, then decreases, then increases again. A transition from mound forma tion to self-affine (semifractal) growth occurs at similar to 135 K. The un derlying mechanisms are postulated. An atomistic model incorporating these mechanisms reproduces the experimental data quantitatively.