Room temperature H2S sensing properties and mechanism of CeO2-SnO2 sol-gelthin films

Citation
Gj. Fang et al., Room temperature H2S sensing properties and mechanism of CeO2-SnO2 sol-gelthin films, SENS ACTU-B, 66(1-3), 2000, pp. 46-48
Citations number
5
Categorie Soggetti
Spectroscopy /Instrumentation/Analytical Sciences","Instrumentation & Measurement
Journal title
SENSORS AND ACTUATORS B-CHEMICAL
ISSN journal
09254005 → ACNP
Volume
66
Issue
1-3
Year of publication
2000
Pages
46 - 48
Database
ISI
SICI code
0925-4005(20000725)66:1-3<46:RTHSPA>2.0.ZU;2-A
Abstract
Using non-alkoxide SnCl2 . 2H(2)O, Ce(NH4)(2)(NO3)(6) as precursors, room t emperature H2S gas sensitive CeO2-SnO2 thin films have been obtained. In th is paper, the synthesis process of CeO2-SnO2 thin films has been introduced ; the gas sensing properties of the CeO2-SnO2 thin films were investigated and compared with those of SnO2 and ZrO2-SnO2 thin films. The experiments i llustrate that CeO2-SnO2 thin film has quite a quick response and recovery behavior, high selectivity, and has better sensitivity than that of ZrO2-Sn O2 thin film toward low concentration of H2S at room temperature. The sensi ng mechanism of CeO2-SnO2 thin films toward H2S at room temperature has als o been discussed in this paper. (C) 2000 Elsevier Science S.A. All rights r eserved.