Some investigation results of the instability of humidity sensors based onalumina and porous silicon materials

Alumina and porous silicon were prepared by the anodization method for humi dity sensor fabrication. The humidity sensors, based on these materials, ha ve the humidity sensitive range of 20% to 95% RH. The first experimental re sults showed that the conductivity and the instability of the sensors may d epend on the porous structure and conductive mechanism of porous materials during reaction with water vapor. Raman Spectroscopy and thermal annealing were used to study the porous films. (C) 2000 Elsevier Science S.A. All rig hts reserved.