The effect of dopants on the electronic structure of SnO2 thin film

Authors
Liu, W Cao, XP Zhu, YF Cao, LL
Citation
W. Liu et al., The effect of dopants on the electronic structure of SnO2 thin film, SENS ACTU-B, 66(1-3), 2000, pp. 219-221
Citations number
7
Categorie Soggetti
Spectroscopy /Instrumentation/Analytical Sciences","Instrumentation & Measurement
Journal title
SENSORS AND ACTUATORS B-CHEMICAL
ISSN journal
09254005 → ACNP
Volume
66
Issue
1-3
Year of publication
2000
Pages
219 - 221
Database
ISI
SICI code
0925-4005(20000725)66:1-3<219:TEODOT>2.0.ZU;2-D
Abstract
In this paper, the structure of SnO2 thin films doped with Pd, Sb, Pt and I n, especially the effects of dopants on the electronic structure of SnO2 we re studied by XPS and TEM. It was observed that the dopants not only change d the Fermi level but also influenced the distribution of electron state de nsity (DESD) of Sn4d valence band. We also studied the electronic structure change of the doped SnO2 after H-2 adsorption. (C) 2000 Elsevier Science S .A. All rights reserved.