Spin-dependent delay time in electronic resonant tunneling at zero magnetic field

The dependence of the phase tunneling time on electronic spin polarization in symmetric and asymmetric double-barrier semiconductor heterostructures i s studied theoretically. The effective one-band Hamiltonian approximation a nd spin-dependent boundary conditions are used for theoretical investigatio n of the electron spin influence on the delay time in tunneling processes. It is shown that the spin-orbit splitting in the dispersion relation for th e electrons can provide a dependence of the delay time on the electron spin polarization without additional magnetic field. This dependence can be con trolled by an external electric field and can be very pronounced for realis tic double-barrier semiconductor heterostrctures. (C) 2000 Elsevier Science Ltd. All rights reserved.