Anomalous Lande factor in narrow-gap semiconductor heterostructures (vol 114, pg 649, 2000)

Citation
V. Lopez-richard et al., Anomalous Lande factor in narrow-gap semiconductor heterostructures (vol 114, pg 649, 2000), SOL ST COMM, 115(9), 2000, pp. 515-515
Citations number
1
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SOLID STATE COMMUNICATIONS
ISSN journal
00381098 → ACNP
Volume
115
Issue
9
Year of publication
2000
Pages
515 - 515
Database
ISI
SICI code
0038-1098(2000)115:9<515:ALFINS>2.0.ZU;2-Q