Growth and microstructure of Ga2O3 nanorods

Citation
Wq. Han et al., Growth and microstructure of Ga2O3 nanorods, SOL ST COMM, 115(10), 2000, pp. 527-529
Citations number
12
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SOLID STATE COMMUNICATIONS
ISSN journal
00381098 → ACNP
Volume
115
Issue
10
Year of publication
2000
Pages
527 - 529
Database
ISI
SICI code
0038-1098(2000)115:10<527:GAMOGN>2.0.ZU;2-R
Abstract
Gallium oxide (Ga2O3) nanorods were prepared by a de are-discharge between a graphite anode filled with a mixture of GaN, graphite and nickel powders and a graphite cathode in helium atmosphere. The structure and composition of the product were determined by high-resolution transmission electron mic roscopy and high spatial resolution electron energy-loss spectroscopy. The Ga2O3 nanorods have diameters in the range of 5-50 nm and a length of up to 30 mu m. Specific features of their microstructure and the growth mechanis m are discussed. (C) 2000 Elsevier Science Ltd. All rights reserved.