We report on the preparation of 10 nm lateral size semiconductor structures
based on island formation in strained layer growth in molecular beam epita
xy. Red light emitting InP quantum dot injection lasers are presented. They
contain densely stacked layers of self-assembled InP quantum dots embedded
in a Ga0.51In0.49P wave guide layer. In the second part of this contributi
on we report on a new atomic layer precise etching technique in MBE, which
allows improved interface control for the preparation of semiconductor nano
structures. The etching process involves AsBr3 exposure of a GaAs or AlGaAs
surface. Switching between atomic layer precise growth and etching is poss
ible within a few seconds. (C) 2000 Elsevier Science B.V. All rights reserv
ed.