A scalable thermal model for trench isolated bipolar devices

Authors
Walkey, DJ Smy, TJ Marchesan, D Tran, H Schroter, M
Citation
Dj. Walkey et al., A scalable thermal model for trench isolated bipolar devices, SOL ST ELEC, 44(8), 2000, pp. 1373-1379
Citations number
8
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Eletrical & Eletronics Engineeing
Journal title
SOLID-STATE ELECTRONICS
ISSN journal
00381101 → ACNP
Volume
44
Issue
8
Year of publication
2000
Pages
1373 - 1379
Database
ISI
SICI code
0038-1101(200008)44:8<1373:ASTMFT>2.0.ZU;2-Y
Abstract
A new physical model is presented, which predicts the thermal resistance of a bipolar transistor fabricated in a trench isolated technology. The model is applied to devices with a variety of geometries in two trench isolated technologies. The average prediction of the model is within 10% of the meas ured values. (C) 2000 Published by Elsevier Science Ltd. All rights reserve d.