A novel area efficient floating field limiting ring edge termination technique

Authors
De Souza, MM Bose, JVSC Narayanan, EMS Pease, TJ Ensell, G Humphreys, J
Citation
Mm. De Souza et al., A novel area efficient floating field limiting ring edge termination technique, SOL ST ELEC, 44(8), 2000, pp. 1381-1386
Citations number
14
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Eletrical & Eletronics Engineeing
Journal title
SOLID-STATE ELECTRONICS
ISSN journal
00381101 → ACNP
Volume
44
Issue
8
Year of publication
2000
Pages
1381 - 1386
Database
ISI
SICI code
0038-1101(200008)44:8<1381:ANAEFF>2.0.ZU;2-M
Abstract
In this paper, a floating ring edge termination structure using minimally s ized lightly doped p-rings is proposed. A novel embodiment of the structure involves placement of shallow p(+)-regions offset from the centre of each of the p-well rings to reduce peak electric field at the surface and to red uce sensitivity to oxide interface charges. The structures have been fabric ated using an advanced, 2 kV MOS-bipolar process technology. A close match between the simulated and experimental results validates the proposed struc ture. (C) 2000 Elsevier Science Ltd. All rights reserved.