Monolithic bidirectional switch. II. Simulation of device characteristics

Analytical considerations led to the proposal of a new device structure for a bidirectional switch, monolithic bidirectional switch. To investigate mo re thoroughly the electrical characteristics which can be realized by such a structure numerical simulations are carried out. The results completely c onfirm the expectations and reveal excellent blocking and forward character istics which seem close to the limit of the respective semiconductor materi al. Additionally, the device promises to offer a tight control of switching transients. If these characteristics could be experimentally verified, the y would allow a new quality for inverter design. At present, thus, the main drawback is that no real devices exist and all results are based on simula tion only. (C) 2000 Elsevier Science Ltd. All rights reserved.