The influence of tunneling effect and inversion layer quantization effect on threshold voltage of deep submicron MOSFETs

Based on the studies of the two-dimensional nature of electrons in the inve rsion layer of the ultrathin gate oxide MOSFET, an approximate model to des cribe both the tunneling and inversion layer quantization effects on deep s ubmicron MOSFET is developed. By using this model, the influence of direct tunneling and the quantum mechanical effects of electrons in the inversion layer on the MOSFET threshold voltage is analyzed for a range of oxide thic kness and substrate doping concentration representative of deep submicron t echnology. The results indicate that both inversion layer quantization effe ct and tunneling effect should be considered when a MOSFET is scaled down t o sub-0.1 mu m level. (C) 2000 Elsevier Science Ltd. All rights reserved.