Obtaining interface state parameters by the MOS admittance technique accounting for fluctuation and tunnel effects

Authors
Bormontov, EN Levin, MN Nakhmanson, RS
Citation
En. Bormontov et al., Obtaining interface state parameters by the MOS admittance technique accounting for fluctuation and tunnel effects, SOL ST ELEC, 44(8), 2000, pp. 1441-1446
Citations number
14
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Eletrical & Eletronics Engineeing
Journal title
SOLID-STATE ELECTRONICS
ISSN journal
00381101 → ACNP
Volume
44
Issue
8
Year of publication
2000
Pages
1441 - 1446
Database
ISI
SICI code
0038-1101(200008)44:8<1441:OISPBT>2.0.ZU;2-J
Abstract
A new technique of determination of interface trap parameters from asymmetr ic curves of the normalized conductance of the metal-oxide-silicon (MOS) sy stem is proposed within the framework of the tunnel-fluctuation model. In c ase of an exponential interface trap distribution in the oxide, the propose d technique allows one to obtain the interface state parameters from MOS ad mittance measurements without combining them with non-stationary methods. ( C) 2000 Elsevier Science Ltd. All rights reserved.