The noise analysis and noise reliability indicators of optoelectron coupled devices

Authors
Dai, YS Xu, JS
Citation
Ys. Dai et Js. Xu, The noise analysis and noise reliability indicators of optoelectron coupled devices, SOL ST ELEC, 44(8), 2000, pp. 1495-1500
Citations number
15
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Eletrical & Eletronics Engineeing
Journal title
SOLID-STATE ELECTRONICS
ISSN journal
00381101 → ACNP
Volume
44
Issue
8
Year of publication
2000
Pages
1495 - 1500
Database
ISI
SICI code
0038-1101(200008)44:8<1495:TNAANR>2.0.ZU;2-0
Abstract
The noise performance of optoelectron coupled devices (OCDs) has been analy zed firstly from the rate equations including Langevin noise sources (C. Ha rder, J. Katz, S. Margalit, J. Shacham, A. Yariv. IEEE J Quant Electron 198 2; QE-18(3):333-7). The noise equivalent circuit of OCDs has been presented in this paper and is used to explain the noise spectrum measurement result s of OCDs. Then three noise reliability indicators used to estimate quality and reliability of OCDs are given. These indicators are general and conven ient for the direct industrial application for OCDs and other semiconductor devices. (C) 2000 Elsevier Science Ltd. All rights reserved.