Cryogenic temperature non-scaling of linear resistance in n-MOSFETs exhibiting reverse short-channel effect

Authors
Niu, GF Cressler, JD Mathew, SJ Subbanna, S
Citation
Gf. Niu et al., Cryogenic temperature non-scaling of linear resistance in n-MOSFETs exhibiting reverse short-channel effect, SOL ST ELEC, 44(8), 2000, pp. 1507-1509
Citations number
6
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Eletrical & Eletronics Engineeing
Journal title
SOLID-STATE ELECTRONICS
ISSN journal
00381101 → ACNP
Volume
44
Issue
8
Year of publication
2000
Pages
1507 - 1509
Database
ISI
SICI code
0038-1101(200008)44:8<1507:CTNOLR>2.0.ZU;2-7
Abstract
An enhancement of the non-scaling of the linear resistance with channel len gth is observed at low temperatures, despite reduced reverse short channel effect. This imposes a significant limitation on the low temperature operat ion of deep submicron CMOS devices. An increased surface roughness scatteri ng in shorter channel devices is suggested to explain the gate overdrive an d temperature dependence. (C) 2000 Elsevier Science Ltd. All rights reserve d.