Effect of cracks in TiN anti-reflection coating layers on early via electromigration failure (vol 365, pg 110, 2000)

Citation
Js. Huang et al., Effect of cracks in TiN anti-reflection coating layers on early via electromigration failure (vol 365, pg 110, 2000), THIN SOL FI, 371(1-2), 2000, pp. 310-315
Citations number
20
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
THIN SOLID FILMS
ISSN journal
00406090 → ACNP
Volume
371
Issue
1-2
Year of publication
2000
Pages
310 - 315
Database
ISI
SICI code
0040-6090(20000801)371:1-2<310:EOCITA>2.0.ZU;2-5
Abstract
Early electromigration failure has been recognized as a generic phenomenon in W-plug via structures. Previous studies have attributed early failure to the properties of the Al layers in contact with the plug, via delamination or to current density distributions in the structure. In this paper, we in vestigate early failure phenomena in W-plug vias and report a novel early v ia failure induced by the presence of a crack crossing the lower metal leve l TiN anti-reflection coating layer in the vicinity of W-plug. The cracks i n the TIN shunting layer may cause large resistance jumps of 250-1000 Omega . Resistance simulation results show that the magnitude of resistance jump increases with the size of the crack. The source of the TiN cracks is discu ssed. (C) 2000 Elsevier Science S.A. All rights reserved.