E. Hecht, Preparation, properties, and molecular structures of dimethylmetal alkoxides and amides of aluminium and gallium, Z ANORG A C, 626(7), 2000, pp. 1642-1646
Citations number
16
Categorie Soggetti
Inorganic & Nuclear Chemistry
Journal title
ZEITSCHRIFT FUR ANORGANISCHE UND ALLGEMEINE CHEMIE
Dimlthylaluminium- (1) and Dimethylgallum-o-methoxyphmyl-1-ethoxide (2) wer
e obtained by reaction of Me3Al and Me3Ga respectively with o-Methoxyphenyl
-1-ethanol in n-pentane. Dimethylaluminium- (3) and dimethylgallium-o-metho
xyphenyl-2-ethylamide (4) were prepared by treatment of Me2AlCl and Me2GaCl
respectively with Lithium-o-methoxyphenyl-2-ethylamide. Trimethylgallium-o
-methoxyphenylmethvlamine-Adduct (5) was isolated using reaction of Me3Ga w
ith the corresponding amine. The compounds were characterised by H-1-, C-13
- and Al-27 n.m.r. spectroscopy. The molecular structures of 2 and 5 were d
etermined by X-ray diffraction. Compounds 1-4 form brigded dimeric molecule
s. The bond distances of the central Ga2O2 ring in 2 correspond to those of
compounds of similar structure.