Influence of oxygen on the parameters of a thin film copper phthalocyaninefield effect transistor

Authors
Zhivkov, I Nespurek, S Schauer, F
Citation
I. Zhivkov et al., Influence of oxygen on the parameters of a thin film copper phthalocyaninefield effect transistor, ADV MAT OPT, 9(5), 1999, pp. 175-180
Citations number
15
Categorie Soggetti
Material Science & Engineering
Journal title
ADVANCED MATERIALS FOR OPTICS AND ELECTRONICS
ISSN journal
10579257 → ACNP
Volume
9
Issue
5
Year of publication
1999
Pages
175 - 180
Database
ISI
SICI code
1057-9257(199909/10)9:5<175:IOOOTP>2.0.ZU;2-9
Abstract
The influence of oxygen on the electrical parameters of a copper phthalocya nine thin film field effect transistor was investigated by means of tempera ture-modulated field effect spectroscopy. It was found that both the dark e lectrical conductivity and threshold voltage of the source-drain current ve rsus gate voltage dependence were changed after oxygen exposure. Both effec ts can be effectively utilised for gas sensing. Copyright (C) 2000 John Wil ey & Sons, Ltd.