Direct synthesis of beta-FeSi2 by ion beam mixing of Fe/Si bilayers

Authors
Milosavljevic, M Dhar, S Schaaf, P Bibic, N Han, M Lieb, KP
Citation
M. Milosavljevic et al., Direct synthesis of beta-FeSi2 by ion beam mixing of Fe/Si bilayers, APPL PHYS A, 71(1), 2000, pp. 43-45
Citations number
20
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
ISSN journal
09478396 → ACNP
Volume
71
Issue
1
Year of publication
2000
Pages
43 - 45
Database
ISI
SICI code
0947-8396(200007)71:1<43:DSOBBI>2.0.ZU;2-R
Abstract
The iron di-silicide beta-FeSi2 is a promising direct band gap semiconducto r but difficult to produce. Here, the successful direct synthesis of this p hase by ion beam mixing of Fe/Si bilayers at temperatures in the range of 4 50 to 550 degrees C is reported. The obtained single-phase beta-FeSi2 layer s and their structure are confirmed by Rutherford backscattering spectromet ry, X-ray diffraction and conversion electron Mossbauer spectroscopy. PACS: 61.80.Jh; 68.55.Nq; 61.82.Fk.