Origin of yellow luminescence from reduced pressure grown bulk GaN crystals

Authors
Herrera-Zaldivar, M Fernandez, P Piqueras, J Sukhoveyev, VV Ivantsov, VA Shreter, YG
Citation
M. Herrera-zaldivar et al., Origin of yellow luminescence from reduced pressure grown bulk GaN crystals, APPL PHYS A, 71(1), 2000, pp. 55-58
Citations number
15
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
ISSN journal
09478396 → ACNP
Volume
71
Issue
1
Year of publication
2000
Pages
55 - 58
Database
ISI
SICI code
0947-8396(200007)71:1<55:OOYLFR>2.0.ZU;2-Q
Abstract
Cathodoluminescence (CL) in the scanning electron microscope has been appli ed to study the luminescence emission of GaN single crystals grown by LPE m ethods. CL spectra show the presence of near band edge and of yellow emissi ons. The latter has been found to be mainly related to rows of hillocks for med at the growth steps. The origin of the yellow luminescence is discussed PACS: 78.60Hk; 71.55Eq.