Metal-induced solid-phase crystallization of hydrogenated amorphous silicon: dependence on metal type and annealing temperature

We report on metal (Cr, Ni, or Pd)-induced solid-phase crystallization (MIS PC) of plasma-enhanced chemical-vapor-deposited hydrogenated amorphous sili con at annealing temperatures less than or equal to 600 degrees C. MISPC is found to significantly reduce the thermal budget of crystallization at ann ealing temperatures as low as similar to 400 degrees C. The lowest achievab le annealing temperature is found to depend on the metal type. The metal ty pe is also found to influence grain size and the conductivity of the polycr ystalline silicon.